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    NAND flash These memories are accessed much like block devices, such as hard disks. Each block consists of a number of pages. The pages are typically 512or 2,048 or 4,096 bytes in size. Associated with each page are a few bytes (typically 1/32 of the data size) that can be used for storage of an error correcting code (ECC) checksum.
    NAND sacrifices the random-access and execute-in-place advantages of NOR. NAND is best suited to systems requiring high capacity data storage. It offers higher densities, larger capacities, and lower cost. It has faster erases, sequential writes, and sequential reads.
ISSIISSI is a technology leader that designs, develops, and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) communications, (iii) digital consumer, and (iv) industrial and medical. Our primary products are high speed and low power SRAM and low and medium density DRAM. The Company also designs and markets NOR flash products and high performance analog and mixed signal integrated circuits. We target high-growth markets with our cost-effective, high-quality semiconductor products and seek to build long-term relationships with our customers. We have been a committed long-term supplier of memory products, including lower density and smaller volume products, even through periods of tight manufacturing capacity.
Density Bus Width Part Number Vcc Ecc Requirement Squential Read Speed (ns) Temp.Range Package Type Download
4Gb X8 IS34ML04G081 3.3V 1-bit 25 -40°C~85°C 48-TSOP NULL
4Gb X8 IS34ML04G084 3.3V 4-bit 25 -40°C~85°C 48-TSOP NULL
4Gb X8 IS34MW04G084 1.8V 4-bit 45 -40°C~85°C 48-TSOP NULL
4Gb X16 IS34MW04G164 1.8V 4-bit 45 -40°C~85°C 48-TSOP NULL