DRAM is a kind of semiconductor memory, the main principle of which is to use the amount of stored charge in the capacitor to represent whether a binary bit (bit) is 1 or 0. Due to the phenomenon of leakage current in the transistor in reality, the amount of charge stored on the capacitor is not enough to correctly discriminate the data, resulting in data corruption. Therefore, for DRAM, periodic charging is an unavoidable requirement. Because of this need for periodic refresh, it is called "dynamic" memory. Relatively speaking, as long as the data is stored in the static memory (SRAM), the memory will not be lost even if it is not refreshed.
Dynamic Random Access Memory (DRAM) is a semiconductor memory whose main function is to use the amount of stored charge in a capacitor to represent whether a binary bit (bit) is 1 or 0. Due to the phenomenon of leakage current in the transistor in reality, the amount of charge stored on the capacitor is not enough to correctly discriminate the data, resulting in data corruption. Therefore, for DRAM, periodic charging is an unavoidable requirement. Because of this need for periodic refresh, it is called "dynamic" memory.
The advantage of DRAM is its simplicity - each bit of data requires only one capacitor and one transistor to process, compared to six transistors typically required per bit on SRAM. For this reason, DRAM has a very high density, higher capacity per unit volume and lower cost. But on the contrary, DRAM also has the disadvantages of slow access speed and large power consumption.
Like most random access memory (RAM), it is a volatile memory device because the data stored in DRAM disappears quickly after the power is turned off.