In real-time systems that need deterministic response,the access speed of memory often determines the upper limit of the performance of the whole machine.SRAM Static Random Access Memory(SRAM)plays a key role in cache and data buffering for a long time because of its characteristics of no refresh,simple read-write timing and constant access delay.The 16Mb asynchronous high-speed SRAM introduced by EMI,with 10ns access speed and embedded ECC design,provides a new domestic choice for high-reliability and high-speed systems.
High speed access of SRAM static random access memory
SRAM static random access memory(SRAM)has a capacity of 16Mb and is organized in 1M×16.It adopts advanced CMOS technology and 6-TR memory cell technology.The minimum address access time is 10ns under 3.3V/2.5V power supply,12ns under 1.8V power supply,and the output enable access time is as low as 5ns,which fully meets the requirements of high-speed logic and real-time control scenarios for read and write throughput.
Embedded ECC,reliability upgrade
SRAM static random access memory has built-in single-bit error error correction logic,which can automatically repair single-bit flip during read operation.This design can significantly reduce the system risk caused by soft errors for industrial sites and highly reliable systems with long-term operation and maintenance difficulties.
Wide voltage design,flexible power supply
The power supply range of SRAM SRAM covers 1.65V~3.6V,and it is compatible with 3.3V,2.5V and 1.8V mainstream levels.TTL is compatible with input and output and supports tri-state output,which is convenient for cross-platform transplantation and old system upgrade.SRAM SRAM also supports data retention mode,and with LB̄/UB̄byte control(×16 mode),independent reading and writing of low bytes and high bytes can be realized.
Industrial packaging
SRAM SRAM is packaged in 48FBGA standard(6mm×8mm,0.75mm solder ball spacing),and its working temperature ranges from-40℃to+85℃,which meets RoHS environmental protection requirements and can directly benchmark the pins and packaging forms of mainstream asynchronous Fast SRAM.
Keywords：SRAM static random access memory
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