Dynamic Random Access Memory LPDDR2 Synchronous DRAM Memory Solution

Overview of EM6KA32HVAFA dynamic random access memory LPDDR2 synchronous DRAM
 

EM6KA32H LPDDR2 SDRAM is a high-speed CMOS dynamic random access memory with a total capacity of 268,435,456 bits.It adopts double data rate architecture,and the data transmission efficiency is greatly improved.The highlight of DRAM core design is that the command/address(CA)bus only needs 10 pins,which can not only transmit instructions and address information,but also manage bank/line buffers,thus significantly reducing the number of system I/O..This simplified design not only reduces the complexity of PCB wiring,but also provides more possibilities for equipment with limited space.
 

In the clock design,DRAM products support 333/400/533 MHz frequency options,with differential clock input CK/CK#,to ensure the stability of signal transmission and anti-interference ability.At the same time,through the double data rate architecture of DQ pin,two bits of data can be transmitted every clock cycle,and the internal 4n prefetch architecture further optimizes the read and write bandwidth.Whether it is high-definition video caching or real-time data processing,DRAM EM6KA32H can easily cope with it.

 

Characteristics of dynamic random access memory LPDDR2 synchronous DRAM(SDRAM)
 

①Fast clock rate:333/400/533 MHz

②Differential clock input CK/CK#

③meeting JEDEC standard

④Four-bit prefetch DDR architecture

⑤Four internal memory banks,each with 2M x 32 bits

⑥Double data rate architecture and data bus for commands and addresses

⑦bidirectional/differential data strobe DQS/DQS#

⑧Automatic TCSR(temperature compensation self-refresh)

⑨Pet-name ruby automatic refresh and self refresh

⑩Attending deep power failure

⑪4096 refresh cycles/32 ms

⑫Power supply:1.8V/1.2V/1.2V/1.2V.

⑬DRAM interface:HSUL_12