Parallel asynchronous MRAM memory S3R4016V1M can replace MR2A16A

With the function of traditional memory becoming more and more limited,new non-volatile memory began to appear.As a domestic alternative selection direction,NETSOL MRAM memory represented by Yingshang Microelectronics introduced S3R4016V1M parallel asynchronous model,which can be used as a pin-to-pin evaluation alternative for MR2A16A.
 

NETSOL S3R4016V1M belongs to STT-MRAM,which has the typical advantages of MRAM memory:almost unlimited reading and writing,durable power-off data,data storage period of more than 10 years,no need for battery backup,eliminating the need for supporting batteries and charging circuits of traditional NVSRAM,and simplifying hardware design.S3R4016V1M model has a capacity of 4Mb,a storage organization of 256K×16bit,and the package supports 44TSOP2 and 48FBGA,which is consistent with that of MR2A16A.The power supply interval is 2.70-3.60V,and the SRAM-compatible parallel asynchronous timing sequence is adopted.The original PCB layout can be directly evaluated and adapted without changing the board again.
 

The typical access speed of MRAM memory S3R4016V1M is 70ns,and the access time is doubled compared with 35ns of MR2A16A.However,this model has no vehicle code grade version,and the original vehicle code MR2A16A(-40~125℃)item cannot be directly replaced,which is more suitable for industrial-grade(-40~85℃)application scenario evaluation.If you are looking for an alternative scheme of Everspin MRAM,please contact us to evaluate the scheme and apply for sample measurement.

Keywords:MRAM memory