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STT-MRAM is a new type of nonvolatile magnetic random access memory, which can write information through spin current. It is the second generation of magnetic memory MRAM. The core of STT-MRAM memory cell is still an MTJ, which is composed of two ferromagnetic layers with different thickness and a layer of several nanometer-thick nonmagnetic isolation layers. It realizes information writing through spin current. 
NETSOL Parallel MRAM Products are ideal for applications that must store and retrieve data and programs quickly and frequently due to the non-volatility, virtually unlimited endurance and fast-write characteristics of STT-MRAM. They are suited for code storage, data logging, backup memory and working memory in industrial designs and can replace Low power SRAM, FeRAM or nvSRAM with same functionality and non-volatility. 
Part Number Density Organization VDD(V) Access Time(ns) Temperature Package Status Download
S3R1016V1M 1Mbit 64Kx16 2.70~3.60 70ns -40℃ to 85℃ 44TSOP2, 48FBGA Mass Prod. NULL
S3R1008V1M 1Mbit 128Kx8 2.70~3.60 70ns -40℃ to 85℃ 44TSOP2, 48FBGA Mass Prod. NULL
S3R1016R1M 1Mbit 64Kx16 1.71~1.98 70ns -40℃ to 85℃ 44TSOP2, 48FBGA Mass Prod. NULL
S3R1008R1M 1Mbit 128Kx8 1.71~1.98 70ns -40℃ to 85℃ 44TSOP2, 48FBGA Mass Prod. NULL
S3R2016V1M 2Mbit 128Kx16 2.70~3.60 70ns -40℃ to 85℃ 44TSOP2, 48FBGA Mass Prod. NULL
S3R2008V1M 2Mbit 256Kx8 2.70~3.60 70ns -40℃ to 85℃ 44TSOP2, 48FBGA Mass Prod. NULL
S3R2016R1M 2Mbit 128Kx16 1.71~1.98 70ns -40℃ to 85℃ 44TSOP2, 48FBGA Mass Prod. NULL
S3R2008R1M 2Mbit 256Kx8 1.71~1.98 70ns -40℃ to 85℃ 44TSOP2, 48FBGA Mass Prod. NULL
S3R4016V1M 4Mbit 256Kx16 2.70~3.60 70ns -40℃ to 85℃ 44TSOP2, 48FBGA Mass Prod. NULL
S3R4008V1M 4Mbit 256Kx16 2.70~3.60 70ns -40℃ to 85℃ 44TSOP2, 48FBGA Mass Prod. NULL
S3R4016R1M 4Mbit 256Kx16 1.71~1.98 70ns -40℃ to 85℃ 44TSOP2, 48FBGA Mass Prod. NULL
S3R4008R1M 4Mbit 256Kx16 1.71~1.98 70ns -40℃ to 85℃ 44TSOP2, 48FBGA Mass Prod. NULL
S3R8016V1M 8Mbit 512Kx16 2.70~3.60 70ns -40℃ to 85℃ 48FBGA, 54TSOP2 Mass Prod. NULL
S3R8008V1M 8Mbit 512Kx8 2.70~3.60 70ns -40℃ to 85℃ 44TSOP2, 48FBGA Mass Prod. NULL
S3R8016R1M 8Mbit 256Kx16 1.71~1.98 70ns -40℃ to 85℃ 48FBGA, 54TSOP2 Mass Prod. NULL
S3R8008R1M 8Mbit 256Kx16 1.71~1.98 70ns -40℃ to 85℃ 44TSOP2, 48FBGA Mass Prod. NULL
S3R1616V1M 16Mbit 1Mx16 2.70~3.60 70ns -40℃ to 85℃ 48FBGA, 54TSOP2 Mass Prod. NULL
S3R1608V1M 16Mbit 2Mx8 2.70~3.60 70ns -40℃ to 85℃ 44TSOP2, 48FBGA Mass Prod. NULL
S3R1616V1M 16Mbit 1Mx16 1.71~1.98 70ns -40℃ to 85℃ 48FBGA, 54TSOP2 Mass Prod. NULL
S3R1608R1M 16Mbit 2Mx8 1.71~1.98 70ns -40℃ to 85℃ 44TSOP2, 48FBGA Mass Prod. NULL
S3R3216V1M 32Mbit 2Mx16 2.70~3.60 70ns -40℃ to 85℃ 48FBGA, 54TSOP2 UD*1 NULL
S3R3216R1M 32Mbit 2Mx16 1.71~1.98 70ns -40℃ to 85℃ 48FBGA, 54TSOP2 UD*1 NULL
S3R6416V1M 64Mbit 4Mx16 2.70~3.60 70ns -40℃ to 85℃ 48FBGA UD*1 NULL
S3R6416R1M 64Mbit 4Mx16 1.71~1.98 70ns -40℃ to 85℃ 48FBGA UD*1 NULL
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