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Low power synchronous DRAM using high-speed CMOS technology

2026-04-17 10:34:11

1.Overview of Low Power Synchronous DRAM

Ramsun's Etron EM638325BK SDRAM is a high-speed CMOS synchronous DRAM with 64 megabits.It is internally configured as four channels of 512K x 32 DRAM with synchronous interface(all signals are recorded on the positive edge of the clock signal,CLK).Each 512K×32-bit bank of DRAM is organized,such as 2048 rows by 256 columns by 32 bits.EM638325 provides programmable read or write burst length of 1,2,4,8 or full page with burst termination option.DRAM auto-precharge can enable the function to provide a precharge sequence that is started by a self-timed line at the end of a burst.Refresh function,automatic or automatic refresh is easy to use.By having a programmable mode register,the system can choose the appropriate mode to maximize its performance.These low-power DRAM are very suitable for applications requiring high performance,memory bandwidth.
 
Low power synchronous DRAM using high-speed CMOS technology
 

2.Features of low power synchronous DRAM EM638325BK series:

DRAM density:64Mb
Organization:2Mx32
DRAM speed:200/166/143.
Vdd interface:3.3V,LVTTL.
DRAM package:90 ball FBGA
Fast access time:5/5.4/5.4 ns.
Fast clock rate:200/166/143 MHz.
Four internal banks(512K x 32-bit x 4 banks)
Pet-name ruby ambient temperature:0~70 degrees Celsius
Attending 4096 refresh cycles/64 ms
Single+3.3v 0.3v power supply
Complete synchronous operation
Internal pipeline architecture
Burst stop function
Automatic refresh and self-refresh
 

3.Other models of low-power synchronous DRAM EM638325BK series:

Low-power synchronous DRAM EM638325TS-5G
Low power synchronous DRAM EM638325TS-6G
Low power synchronous DRAM EM638325TS-7G
Low power synchronous DRAM EM638325BK-5H
Low power synchronous DRAM EM638325BK-6H
Low power synchronous DRAM EM638325BK-7H


Keywords:DRAM

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