主页 › 产品中心NV RAMMRAMDDR3/DDR4 ST-MRAM
Everspin MRAM是一种具有革命性的存储器,其原理是利用电子自旋的磁性结构,来提供不会产生损耗的非挥发特性。Everspin MRAM可在集成了硅电路的磁性材料中存储信息,以在单一、可无限使用的组件中提供SRAM的速度以及闪存的非挥发特性。Everspin是从飞思卡尔半导体公司分离出来的一家独立公司。2006年,Everspin推出业界第一款商业化MRAM产品。今日,Everspin MRAM已广泛用在数据存储、工业自动化、游戏、能源管理、通讯、运输、和航空电子领域。

DDR3 DRAM Compatible MRAM - Spin Torque Technology

The DDR3 Spin-Torque MRAM is a non-volatile memory that is non-volatile with high endurance at DDR3 speeds. The device is capable of DDR3 operation at rates of up to 800MT/sec/in. It is designed to comply with all DDR3 DRAM features such as posted CAS, on-device termination (ODT), and internal ZQ calibration. With Spin-Torque MRAM technology, cell refresh is not required, which greatly simplifies system design and reduces overhead.


The initial 64Mb device is the first product in Everspin's ST-MRAM roadmap that is planned to scale to up to gigabit density and higher speeds.
 
●.Supports Standard DDR3 SDRAM Features.
●.Standard DDR3 SDRAM compatible footprint and pinouts.
●.400MHz clock.
●.512-bit Page Size.
●.On-Device Termination.

Everspin 64Mb DDR3 Spin-Torque MRAM
The EMD3D064M08B1 is an 8Mb x 8 Spin-Torque MRAM capable of DDR3 operation at rates of up to 800MT/sec/pin.  
It is available in a 9 x 13mm BGA package.
 
Everspin 256Mb DDR3 Spin-Torque MRAM
The EMD3D256M[08G1/16G2] 32Mb x 8 or 16Mb x 16 Spin-Torque MRAM capable of DDR3 operation at rates of up to 1333MT/sec/pin. 
It is available in a 78-ball [x8] or a 96-ball [x16] 10 x 13mm BGA package.



Application Note: DDR3 ST-MRAM in Enterprise SSD
Utilizing Everspin ST-MRAM in an Enterprise SSD to greatly reduce power-fail energy storage while increasing SSD performance and density
 
Application Note:  As Enterprise SSDs continue to push the envelope in terms of system performance and smaller form factors, SSD solutions providers are facing greater challenges to increase performance and density while continuing to protect data-in-flight from power failures. NAND flash has not significantly increased in performance and the improvement in SSD performance is typically made by adding more parallel channels of flash. This increases the need for energy storage for power fail protection which in turn reduces space available for the storage array for a fixed form factor.
 
This app note explores the SSD architecture benefits of employing Everspin ST-MRAM on the DDR bus of the SSD controller to provide a high speed, nonvolatile write buffer in order to reduce power fail energy storage while increasing performance and storage density.
 

 

如需要以上产品详细信息请联系我们 0755-66658299.

展开